MPS-6003D

FUENTE 1 SALIDA VARIABLE 0-30V/5A

Descripción FuentedeAlimentaciónPrincipal:220V±10%,50/60Hz±2Hz;110/220V±10%seleccionable,50/60Hz±2Hz(clienteopcional).

MPS-6003D+

FUENTE 1 SALIDA VARIABLE 0-30V/5A

Descripción FuentedeAlimentaciónPrincipal:220V±10%,50/60Hz±2Hz;110/220V±10%seleccionable,50/60Hz±2Hz(clienteopcional).

MVP-6003

ExpandableFanlessEmbeddedComputer

N6003NZ

N-channelMOSFET600V,2A,4.4Ω

Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0

NCE6003

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE6003

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

NCE6003M

LCEN-ChannelEnhancementModePowerMOSFET

NCE6003M

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON)

NCE6003X

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE6003XM

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)