Expandable Fanless Embedded Computer

文件：216.82 Kbytes 页数：2 Pages

ADLINK

凌华科技

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

文件：280.47 Kbytes 页数：8 Pages

RENESAS

瑞萨

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：639.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：503.01 Kbytes 页数：9 Pages

VBSEMI

微碧半导体