SiC 碳化硅肖特基二极管

GWOKSEMI

国晶微

Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior Benefits • Higher System Efficiency • Parallel Device Convenience without thermal runaway • Higher Temp

文件：1.30779 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essential

文件：1.60756 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.75514 Mbytes 页数：10 Pages

SMCDIODE

桑德斯微电子