IRF1302

PowerMOSFET(Vdss=20V,Rds(on)=4.0mohm,Id=180A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fast

IRF1302L

PowerMOSFET(Vdss=20V,Rds(on)=4.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fast

IRF1302PBF

AUTOMOTIVEMOSFET(VDSS=20V,RDS(on)=4.0m廓,ID=180A)

IRF1302S

PowerMOSFET(Vdss=20V,Rds(on)=4.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fast

ISF1302

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=49mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

KI1302DL

N-Channel30-V(D-S)MOSFET

KRF1302S

HEXFETPowerMOSFET

KTD1302

EPITAXIALPLANARNPNTRANSISTOR(AUDIOMUTING)

AUDIOMUTINGAPPLICATION. FEATURES •HighEmitter-BaseVoltage:VEBO=12V(Min.). •HighReversehFE:ReversehFE=20(Min.)(VCE=2V,IC=4mA). •LowonResistance:RON=0.6ή(Typ.)(IB=1mA).

KTD1302

TRANSISTOR(NPN)

FEATURES ●SmallFlatPackage ●AudioMutingApplication ●HighEmitter-BaseVoltage

KTD1302

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SmallFlatPackage ●AudioMutingApplication ●HighEmitter-BaseVoltage