射频前端芯片 - PA

GC0609是一款针对902-928MHz频段的IOT专网功率放大器\n4V的正常工作电压\n封装尺寸为LGA 2.5mm?mm • 采用低成本CMOS工艺\n• 支持低压供电且性能出色;

Geo-chip

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High voltage reisistor

文件：426.88 Kbytes 页数：12 Pages

MuRata

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N-channel MOSFET 60 V, 120 A, 3.0 mΩ

Features • Low on-state resistance : RDS(on) = 3.0 mΩ max. ( VGS = 10 V, ID = 60 A ) • Low Ciss : Ciss = 11300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±120 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：704.93 Kbytes 页数：7 Pages

RENESAS

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Silicon P Channel MOS FET Series Power Switching

文件：90.56 Kbytes 页数：7 Pages

RENESAS

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