首页 >GC0609>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Highvoltagereisistor | MURATA1Murata Manufacturing Co., Ltd 村田村田制作所 | MURATA1 | ||
N-channelMOSFET60V,120A,3.0mΩ Features •Lowon-stateresistance:RDS(on)=3.0mΩmax.(VGS=10V,ID=60A) •LowCiss:Ciss=11300pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±120A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
60V-1.5VSiliconNChannelThermalFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
SENSITIVEGATETRIACS DESCRIPTION TheT06xxxHseriesoftriacsusesahighperformanceMESAGLASStechnology.Thesepartsareintendedforgeneralpurposeapplicationswheregatehighsensitivityisrequired. FEATURES ■IT(RMS)=6A ■VDRM=400Vto800V ■IGT≤5mAto≤10mA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SENSITIVEGATETRIACS DESCRIPTION TheT06xxxHseriesoftriacsusesahighperformanceMESAGLASStechnology.Thesepartsareintendedforgeneralpurposeapplicationswheregatehighsensitivityisrequired. FEATURES ■IT(RMS)=6A ■VDRM=400Vto800V ■IGT≤5mAto≤10mA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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