Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Architectural lighting

文件：812.7 Kbytes 页数：22 Pages

OSRAM

艾迈斯欧司朗

丝印：GAPA；Package：SOT-23；Precision, Low Noise FGA™ Voltage References with Disable

Features • Reference output voltage . . . . . . . . . . . . . . . .2.048V, 2.500V, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.000V, 3.300V, 4.096V • Initial accuracy . . . . . . . . . . . . . . . . . . . . . . . . ±1.0mV, ±2.5mV • Input voltage range - ISL21060-20 . . . .

文件：3.01874 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1200 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：551.02 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1200 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：551.02 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：556.07 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体