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GAL22V10D-10LS

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LS

GAL 22V10 Device Datasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LS

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LS

All Devices Discontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

详细参数

  • 型号:

    GAL22V10D-10LS

  • 功能描述:

    SPLD - 简单可编程逻辑器件 HI PERF E2CMOS PLD

  • RoHS:

  • 制造商:

    Texas Instruments

  • 逻辑系列:

    TICPAL22V10Z

  • 大电池数量:

    10

  • 最大工作频率:

    66 MHz

  • 延迟时间:

    25 ns

  • 工作电源电压:

    4.75 V to 5.25 V

  • 电源电流:

    100 uA

  • 最大工作温度:

    + 75 C

  • 最小工作温度:

    0 C

  • 安装风格:

    Through Hole

  • 封装/箱体:

    DIP-24

供应商型号品牌批号封装库存备注价格
LAT
21+
标准封装
4
进口原装,订货渠道!
询价
LAT
23+
65480
询价
Lattice Semiconductor Corporat
22+
28PLCC (11.51x11.51)
9000
原厂渠道,现货配单
询价
Lattice Semiconductor Corporat
21+
28PLCC (11.51x11.51)
13880
公司只售原装,支持实单
询价
Lattice
06/07+
PLCC28
200
询价
Lattice
15+
PLCC28
10
全新原装正品现货
询价
LATTICE
23+
PLCC28
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
Lattice
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
LATTICE
2016+
PLCC28
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
LATTICE
2017+
PLCC-28
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
更多GAL22V10D-10LS供应商 更新时间2024-4-28 17:45:00