GAL22V10规格书行情报价莱迪思LATTICE第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GAL22V10B-25LJI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-25LP	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-25LPI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-25QJ	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-25QP	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-7LJ	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-7LP	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10B-7LPI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10C-10LJ	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE
GAL22V10C-10LJI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	LATTICE 莱迪思	LATTICE

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技术参数

延迟时间 tpd（1）最大值：
10ns
电源电压 - 内部：
4.5 V ~ 5.5 V
宏单元数：
10
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
28-LCC（J 形引线）
供应商器件封装：
28-PLCC（11.51x11.51）

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	GAL22V10	AMD	00+	PLCC	1700	全新原装绝对优势现货特价!	询价
深圳市欧立现代科技有限公司	GAL22V10	AMD	24+	PLCC	7150	全新原装现货,欢迎询购!!	询价
深圳市得捷芯城科技有限公司	GAL22V10	Lattice(莱迪斯)	25+	N/A	4658	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市高捷芯城科技有限公司	GAL22V10	Lattice(莱迪斯)	25+	N/A	4658	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市一线半导体有限公司	GAL22V10	AMD	24+	PLCC	1902		询价
深圳市佳鑫美电子科技有限公司	GAL22V10	LATTICE	25+	DIP24	3629	原装优势!房间现货!欢迎来电!	询价
深圳市河锋鑫科技有限公司	GAL22V10	Lattice(莱迪斯)	2021/2022+	标准封装	3500	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市宏捷佳电子科技有限公司	GAL22V10	AMD	2023+	PLCC	50000	原装现货	询价
深圳市安富世纪电子有限公司	GAL22V10	LATTICE/莱迪斯	23+		6000	专注配单,只做原装进口现货	询价
深圳市柯尔基电子有限公司	GAL22V10	LATTICE	23+24	DIP-	9680	原盒原标.进口原装.支持实单 .价格优势	询价

更多GAL22V10供应商更新时间2026-1-30 15:46:00

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