SCRs Nuclear Radiation Resistant, Planar

文件：202.17 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Silicon Controlled Rectifier (SCR)

Microchip

微芯科技

SPEAKER

FEATURES • 103 mm • square frame • 2 W • 8 Ω • AlNiCo magnet • paper cone

文件：474.62 Kbytes 页数：3 Pages

CUID

Square frame paper cone - alnico magnet

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文件：238.56 Kbytes 页数：2 Pages

CUI

isc N-Channel Transistor

DESCRIPTION ·Optional Gate Return Pin ·Exceptional Safe Operating Area ·Excellent Gain Linearity ·Positive Temperature Coefficient of RDS,ON APPLICATIONS ·DC-DC converters ·Pulse Generators ·DC Choppers

文件：540.2 Kbytes 页数：4 Pages

ISC

无锡固电

SiC MOSFET Power Module

DESCRIPTION ·SiC MOSFET ·Positive Temperature Coefficient ·Low Inductance ·Isolated Copper Baseplate Using DBC Technology ·SOT-227 Package APPLICATIONS ·AC and DC Motor Control ·PFC ·SMPS ·Brake Switch

文件：365.08 Kbytes 页数：5 Pages

ISC

无锡固电

SiC MOSFET Power Module

DESCRIPTION ·SiC MOSFET ·Positive Temperature Coefficient ·Low Inductance ·Isolated Copper Baseplate Using DBC Technology ·SOT-227 Package APPLICATIONS ·AC and DC Motor Control ·PFC ·SMPS ·Brake Switch

文件：365.11 Kbytes 页数：5 Pages

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2,500 Volt AC/RMS) • Very low internal inductance (≤ 5 nH typ.) • Industry

文件：300.34 Kbytes 页数：10 Pages

IRF

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (5 nH typical) • Industry standard o

文件：252.84 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (5 nH typical) • Industry standard o

文件：252.84 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司