G75P04M

丝印：G75P04；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description TheG75P04Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G75P04MA

丝印：G75P04；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description TheG75P04MAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G75P04MA

MOSFET;

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electronic power systems. Goford offers a comprehensive range of power MOSFETs, serving diverse industries, including the automotive market, with advanced and efficient packaging options.

G75P04S

P-ChannelEnhancementModePowerMOSFET

Description TheG75P04Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G75P04T

P-ChannelEnhancementModePowerMOSFET

Description TheG75P04Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

NP75P04YLG

ProductScoutAutomotive

NP75P04YLG

MOSFIELDEFFECTTRANSISTOR

Description TheNP75P04YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=9.7mΩMAX.(VGS=−10V,ID=−37.5A) ⎯RDS(on)=14mΩMAX.(VGS=−5V,ID=−37.5A) •Logicleveldrivetype •Gat

PJD75P04E-AU

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-20A