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IRF3315

N-ChannelMOSFETTransistor

•DESCRITION •Combinewiththefastswitchingspeedandruggedizeddevicedesign •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤70mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3315

PowerMOSFET(Vdss=150V,Rds(on)=0.07ohm,Id=27A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315L

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315L

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3315LPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315LPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF3315S

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3315S

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

详细参数

  • 型号:

    G3315

  • 制造商:

    ROEBUCK

  • 功能描述:

    RBK POLYTHENE ANTI-SPLASH FUNNEL 7.5

供应商型号品牌批号封装库存备注价格
CW
20+
开关元件
2896
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询价
24+
N/A
67000
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INTEL
21+
标准封装
5000
进口原装,订货渠道!
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NICHTEK
23+
ROHS
9400
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NICHTEK
24+
ROHS
990000
明嘉莱只做原装正品现货
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DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
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DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
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Diodes
22+
NA
3745
原装正品支持实单
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DIODES
两年内
NA
3660
实单价格可谈
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Pericom
2010+
N/A
2212
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更多G3315供应商 更新时间2021-9-14 10:50:00