High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌

600V/30A Trench Field Stop IGBT

Features ◼ 600V,30A ◼ VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A ◼ High speed switching ◼ Higher system efficiency ◼ Soft current turn-off waveforms

文件：1.19736 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

600V PT IGBT

文件：663.24 Kbytes 页数：7 Pages

SEMIHOW

600V PT IGBT

文件：643.46 Kbytes 页数：7 Pages

SEMIHOW