首页 >G30N60B3>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

G30N60B3

60A, 600V, UFS Series N-Channel IGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBT

60A,600V,UFSSeriesN-ChannelIGBT withAnti-ParallelHyperfastDiode TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabip

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXXH30N60B3

XPTTM600VIGBT

IXYS

IXYS Integrated Circuits Division

IXXQ30N60B3M

AdvanceTechnicalInformation

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    G30N60B3

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供应商型号品牌批号封装库存备注价格
FAIRCHILD
2017+
TO247
45248
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
H
07+
TO247
3000
询价
FAIRCHIL仙童
23+
管3P
18000
询价
哈里斯
23+
TO-247
3000
全新原装
询价
23+
N/A
46280
正品授权货源可靠
询价
FAIRCHILD/仙童
23+
TO-247
10000
公司只做原装正品
询价
FAIRCHILD/仙童
23+
TO-247
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-247
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
22+
TO-247
9800
只做原装正品假一赔十!正规渠道订货!
询价
FAIRCHILP
TO-247
68900
原包原标签100%进口原装常备现货!
询价
更多G30N60B3供应商 更新时间2024-4-30 14:49:00