60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

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FAIRCHILD

仙童半导体

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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FAIRCHILD

仙童半导体

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

60A, 600V, UFS Series N-Channel IGBT\nwith Anti-Parallel Hyperfast DiodeThe HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • 60A, 600V, TC= 25oC\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150oC\n• Short Circuit Rating\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode;

ONSEMI

安森美半导体

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

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INTERSIL

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：221.78 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：109.09 Kbytes 页数：7 Pages

INTERSIL