G30N60B3中文资料仙童半导体数据手册PDF规格书
G30N60B3规格书详情
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
Features
• 60A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
产品属性
- 型号：
G30N60B3
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
哈里斯 |
05+ |
TO-247 |
3000 |
自己公司全新库存绝对有货 |
询价 | ||
FSC |
12+ |
TO-247 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHI |
23+ |
TO247 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
哈里斯 |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
HARRIS |
2023+ |
TO3PO24 |
5800 |
进口原装,现货热卖 |
询价 | ||
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
询价 | |||
FAIRCHILD/仙童 |
24+ |
TO3P |
27950 |
郑重承诺只做原装进口现货 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO-3P |
30153 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
