丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G28IH125DF；Package：TO-247；1250 V, 30 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.3818 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：G28IH125DF；Package：TO-3P；1250 V, 30 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.3818 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体