丝印：G21；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

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RENESAS

瑞萨

丝印：G21；Package：SOT23；P-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Le

文件：123.95 Kbytes 页数：2 Pages

TYSEMI

台湾TY半导体

丝印：G21；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：G21；Package：SOT-346；Digital transistors (built-in resistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：77.05 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：G21；Package：SOT-346；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：359.09 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：G21；Package：SOT-346；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：359.09 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：G21；Package：SOT-323；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：359.09 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：G21；Package：SOT-323；500mA/50V Digital transistor

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：1.08096 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：G21；Package：SOT-323；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：359.09 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：G21；Package：SOT-323；Digital transistors (built-in resistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：77.05 Kbytes 页数：4 Pages

ROHM

罗姆