S1KP1M-7

Marking：G21；Package：PowerDI123；1.0A SURFACE MOUNT STANDARD RECOVERY RECTIFIER PowerDI123

Features -Ideallysuitedforautomatedassembly -Exposedheatsinkondeviceundersideprovidesexcellentthermalperformance -GlassPassivatedDieConstruction -Lead-FreeFinish;RoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3) -Forautomotiveapplicatio

DTD113ZC

Marking：G21；Package：SOT-23；500mA/50V Digital transistor

DTD113ZK

Marking：G21；Package：SOT-346；500mA / 50V Digital transistors (with built-in resistors)

DTD113ZK

Marking：G21；Package：SOT-346；500mA/50V Digital transistor

DTD113ZK

Marking：G21；Package：SOT-346；500mA / 50V Digital transistors

DTD113ZU

Marking：G21；Package：SOT-323；500mA / 50V Digital transistors (with built-in resistors)

DTD113ZU

Marking：G21；Package：SOT-323；500mA / 50V Digital transistors

LMG2100R044RARR

Marking：G2100；Package：VQFN-FCRLF；LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1Features •Integrated4.4mΩhalf-bridgeGaNFETsanddriver •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofu

UPG2181T5R-E2

Marking：G2181；Package：RQFN；GaAs INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VDD=2.8to3.2V(3.0VTYP.) •Controlvoltage:Vcont(H)=1.5toVDD(VDDTYP.) :Vcont(L)=0to0.2V(0VTYP.) •Lowinsertionloss:Lins1=0.8dBTYP.@f=2.3to2.7GHz,VDD=3.0V,Vcont(H)=3.0V,Vcont(L)=0V :Lins2=1.0dBTYP.@f=3.

UPG2181T5R-E2-A

Marking：G2181；Package：RQFN；GaAs INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VDD=2.8to3.2V(3.0VTYP.) •Controlvoltage:Vcont(H)=1.5toVDD(VDDTYP.) :Vcont(L)=0to0.2V(0VTYP.) •Lowinsertionloss:Lins1=0.8dBTYP.@f=2.3to2.7GHz,VDD=3.0V,Vcont(H)=3.0V,Vcont(L)=0V :Lins2=1.0dBTYP.@f=3.