650V GaN FET

The G1N65 series FETs are hybrid normally-off Gallium Nitride (GaN) field effect transistors with the strongest gate and the lowest reverse voltage drop of all wide-band-gap devices in the market. They allow simple gate drive, offer best-in-class performance and outstanding reliability. • Strong gate with a high threshold, no need for negative gate drive,and a high repetitive input voltage tolerance of ±18V.\r\n• Fast turn-on/off speed for reduced cross-over losses.\r\n• Low QG and simple gate drive for lowest driver consumption at high frequencies.\r\n• Lowest VF in off-state reve;

Ganext

镓未来

丝印：G1NP02E；Package：SOT-23-6LDual；N and P Channel Enhancement Mode Power MOSFET

Description The G1NP02LLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

20/-20V N+P Channel TRENCH MOSFET

GOFORD

谷峰半导体

场效电晶体 - N Channel

Liteon

光宝科技