G1K1P06LL规格书应用电路原装现货GOFORD-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
G1K1P06LL	文件：796.76 Kbytes Page：6 Pages	丝印：G1K1P06；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET Description The G1K1P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：796.76 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G1K1P06LL	文件：300 bytes Page：1 Pages	41V-60V	GOFORD 谷峰半导体	GOFORD
G1K1P06HH	文件：879.26 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G1K1P06HH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：879.26 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G1K1P06LH	文件：826.32 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G1K1P06LH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：826.32 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多G1K1P06LL供应商更新时间2025-12-1 11:06:00