G18N50T

Marking：G18N50；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lSwitchModePowerSupply(SMPS) l

HFH18N50S

500VN-ChannelMOSFET

HFP18N50U

SuperiorAvalancheRuggedTechnology

HFS18N50U

SuperiorAvalancheRuggedTechnology

HY18N50W

500V/18AN-ChannelEnhancementModeMOSFET

IRFB18N50K

PowerMOSFET

1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable

IRFB18N50K

PowerMOSFET

IRFB18N50K

PowerMOSFET(Vdss=500V,Rds(on)max=0.26ohm,Id=27A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching 4.HardSwitchedandHighFrequencyCircuits

IRFB18N50K

PowerMOSFET

IRFB18N50K

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.