丝印：G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：788.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G120P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：830.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：599.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：492.02 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l LED power supplies l Cell Phone C

文件：755.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G12P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：582.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：488.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：623.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体