丝印：G80N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：974.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

Switching (30V, 2.5A)

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：81.21 Kbytes 页数：4 Pages

ROHM

罗姆

4V Drive Nch MOS FET

文件：70.85 Kbytes 页数：4 Pages

ROHM

罗姆

4V Drive Nch MOS FET

4V Drive Nch MOS FET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) . Application Power switching, DC / DC converter. Structure Silicon N-channel MOS FET

文件：65 Kbytes 页数：4 Pages

ROHM

罗姆