| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
30V PNP MEDIUM POWER TRANSISTOR Features •BVCEO>-30V •IC=-5.5AHighContinuousCollectorCurrent •IC=-20APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
30V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features •BVCEO>-30V •IC=-5.5AHighContinuousCollectorCurrent •IC=-20APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS Features •BVCEO>-30V •IC=-5.5AHighContinuousCollectorCurrent •IC=-20APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-261-4，TO-261AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 5.5A SOT223-3 | PAMDiodes Incorporated 龙鼎威 | PAM | ||
包装：卷带（TR） 封装/外壳：TO-261-4，TO-261AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 5.5A SOT223-3 | PAMDiodes Incorporated 龙鼎威 | PAM | ||
PNPSILICONPLANARHIGHCURRENTTRANSISTOR Description TheGL949isdesignedforgeneralpurposeswitchingandamplifierapplications. Features ●6Ampscontinuouscurrent,upto20Ampspulsecurrent ●Verylowsaturationvoltages | GTM 勤益投資控股股份有限公司 | GTM | ||
PNPSILICONPLANARHIGHCURRENTTRANSISTOR | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
ActiveBiasControllerHighCurrent | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
GaAspHEMTMMIC2WATTPOWERAMPLIFIERWITHPOWERDETECTOR,12-16GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAspHEMTMMIC2WATTPOWERAMPLIFIERWITHPOWERDETECTOR,12-16GHz | Hittite Hittite Microwave Corporation | Hittite | ||
INTEGRATEDCIRCUITS INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
LOWVOLTAGE1:15PECLTOCMOSCLOCKDRIVER LowVoltage1:15PECLtoCMOSClockDriver TheMPC949isalowvoltageCMOS,15outputclockbuffer.The15outputscanbeconfiguredintoastandardfanoutbufferorinto1Xand1/2Xcombinations.ThedevicefeaturesalowvoltagePECLinput,inadditiontoitsLVCMOS/LVTTLinputs,toallowitt | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
IntegratedCircuitDualAudioOperationalAmplifier/Preamplifier Description: TheNTE949consistsoftwoidenticalhighgainOPAmpsconstructedonasingle8–LeadMetalCantypepackage.Thesethree–stageamplifiersuseClassAPNPtransistoroutputstageswithuncommittedcollectors.Thisenablesavarietyofloadstobeemployedforgeneralpurposeapplic | NTE NTE Electronics | NTE | ||
SmartLowsidePowerSwitch | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SB®175ConnectorsUpto280Amps Wiressizesfrom10to1/0AWG(5.3to50mm²)fitin thesecondtolargestconnectorintheSB®series.The 3poleSB®175addsanadditionalpositionforpower orgrounding.AllMultipolewireconnectorhousings aregenderlessandmatetothemselvesminimizing inventoryandassemblycomplex | APP Anderson Power Products, Inc. | APP | ||
SB®175ConnectorsUpto280Amps Wiressizesfrom10to1/0AWG(5.3to50mm²)fitin thesecondtolargestconnectorintheSB®series.The 3poleSB®175addsanadditionalpositionforpower orgrounding.AllMultipolewireconnectorhousings aregenderlessandmatetothemselvesminimizing inventoryandassemblycomplex | APP Anderson Power Products, Inc. | APP | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor Preliminarydata ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ●fT=9GHz F=1dBat1GHz | ZHAOXINGWEIZhaoxingwei Electronics ., Ltd 兆兴威深圳市兆兴威电子有限公司 | ZHAOXINGWEI | ||
UHFwidebandtransistor DESCRIPTION SiliconNPNtransistorinasurfacemount3-pinSOT416(SC-75)package.ThetransistorisprimarilyintendedforwidebandapplicationsintheGHzrangeintheRFfrontendofanaloganddigitalcellulartelephones,cordlessphones,radardetectors,pagersandsatelliteTV-tuners. FEA | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconPlanarHighCurrentGainTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
产品属性
- 产品编号：
FZT949TA
- 制造商：
Diodes Incorporated
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
440mV @ 500mA，5.5A
- 电流 - 集电极截止（最大值）：
50nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
100 @ 1A，1V
- 频率 - 跃迁：
100MHz
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-261-4，TO-261AA
- 供应商器件封装：
SOT-223-3
- 描述：
TRANS PNP 30V 5.5A SOT223-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
24+ |
TO-261-4,TO-261AA |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
DIODES |
ROHS全新原装 |
原厂原包原封△ |
37000 |
原装代理经销特价原装现货小批量支持QQ350053121 |
询价 | ||
ZETEX/DIO |
SOT223 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
DIODES/美台 |
2019+ |
SOT223 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
ZETEX |
24+ |
SOT-223 |
500 |
只做原厂渠道 可追溯货源 |
询价 | ||
DIODES(美台) |
22+ |
SOT-223 |
23 |
QQ询价 绝对原装正品 |
询价 | ||
DIODES |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
DIODES/美台 |
20+ |
SOT-223 |
120000 |
原装正品 可含税交易 |
询价 | ||
DIODES |
22+ |
6743 |
华南区总代 |
询价 | |||
DIODES/美台 |
2021+ |
SOT223 |
9000 |
原装现货,随时欢迎询价 |
询价 |
相关规格书
更多- FZT949TA-CUTTAPE
- FZT953TA
- FZT955TA
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相关库存
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- FZT953TA-CUTTAPE
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- FZTA14TA-CUTTAPE
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- G.1010
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