IHM-B Modul

Electrical Features • Extended operating temperature Tvj op • Low switching losses • Low VCEsat • Tvj = 150°C Mechanical Features • 4 kV AC 1min insulation • Package with CTI > 400 • High creepage and clearance distances • High power density • IHM B housing • Copper base plate

文件：591.12 Kbytes 页数：9 Pages

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IGBT模块

1700V  IHMB 190mm single switch IGBT Module with Trench/Fieldstop IGBT4 - The best solution for your industry applications\n • Extended Operation Temperature T(vj op)\n• Low Switching Losses; Low V(CEsat)\n• T(vj op) = 150°C\n• 4kV AC 1min Insulation\n• Package with CTI > 400\n• High Creepage and Clearance Distances\n• Copper Base Plate\n• UL recognised\n\n优势:\n• High Power Density\n• Standardized housing;

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IHM-B Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled Diode und bereits aufgetragenem Thermal Interface Material

文件：557.92 Kbytes 页数：9 Pages

Infineon

英飞凌

IGBT模块

1700 V IHM B 190 mm single switch IGBT Module with Trench/Fieldstop IGBT 4 and pre-applied Thermal Interface Material - The best solution for your industry applications.  • Extended operation temperature Tvj op\n• Low switching losses; Low VCEsat\n• Tvj op = 150°C\n• 4 kV AC 1min insulation\n• Package with CTI > 400\n• High creepage and clearance distances\n• Copper base plate\n• UL recognised\n\n优势:\n• High power density\n• Standardized housing;

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Package：模块；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE 1700V 7200A

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英飞凌

Package：模块；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE 1700V 7200A

Infineon

英飞凌