| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SmallSignalSwitchingDiodes,LowLeakageCurrent | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiodes,LowLeakageCurrent FEATURES •Siliconplanardiodes •Verylowreversecurrent •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS Protectioncircuits,timedelaycircuits,peakfollower circuits,logarithmicamplifiers | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalFastSwitchingDiode,HighVoltage FEATURES •Siliconplanardiode •Verylowreversecurrent •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Protectioncircuits,delaycircuits | VishayVishay Siliconix 威世科技 | Vishay | ||
200mAAxialLeadedSmallSignalSwitchingDiodes Features ●SiliconPlanarDiode ●Verylowreversecurrent ●Lead(Pb)-freecomponent ●ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
SiliconPlanarDiode Features •SiliconPlanarDiode •Verylowreversecurrent •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Protectioncircuits,delaycircuits | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiode,HighVoltage | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiode,HighVoltage | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiode,HighVoltage | VishayVishay Siliconix 威世科技 | Vishay | ||
UHFVariableCapacitanceDiode DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage. •C28:1.9pF;ratio:10 | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | LRC | ||
UHFvariablecapacitancediode DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage. •C28:1.9pF;ratio:10 | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistorArray(Switchingcircuit,inverter,interfacecircuit,drivercircuit) | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
FXA135
- 制造商：
FOX
- 制造商全称：
FOX
- 功能描述：
Ceramic Automotive Grade SMD Tuning Fork
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
22+ |
51X75 |
90000 |
原装进口现货/百分百正品 |
询价 | ||
HITACHI/日立 |
21+ROHS |
90X196 |
46543 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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