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FXT751

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *60VoltVCEO *2Ampcontinuouscurrent *Ptot=1Watt APPLICATIONS *Lamp,relayorsolenoiddrivers *Audiocircuits *ReplacementofTO126andTO220parts

Zetex

Zetex Semiconductors

FZT751

PNPSILICONPLANARHIGHPERFORMANCETRANSISTOR

60VPNPHIGHPERFORMANCETRANSISTOR Features •BVCEO>-60V •IC=-3AhighContinuousCurrent •ICM=-6APeakPulseCurrent •LowSaturationVoltageVCE(sat)

Zetex

Zetex Semiconductors

FZT751

HighPerformanceTransistor

Features ●60VoltVCEO. ●3Ampcontinuouscurrent. ●Lowsaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

FZT751

SOT223PNPSILICONPLANARHIGHPERFORMANCETRANSISTOR

Features •BVCEO>-60V •IC=-3AhighContinuousCurrent •ICM=-6APeakPulseCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

FZT751Q

60VPNPHIGHPERFORMANCETRANSISTOR

DIODESDiodes Incorporated

美台半导体

FZT751Q

60VPNPHIGHPERFORMANCETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEO>-60V •IC=-3AHighContinuousCurrent •ICM=-6APeakPulseCurrent •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

美台半导体

FZT751QTA

60VPNPHIGHPERFORMANCETRANSISTOR

DIODESDiodes Incorporated

美台半导体

FZT751QTA

60VPNPHIGHPERFORMANCETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEO>-60V •IC=-3AHighContinuousCurrent •ICM=-6APeakPulseCurrent •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

美台半导体

FZT751QTC

60VPNPHIGHPERFORMANCETRANSISTOR

DIODESDiodes Incorporated

美台半导体

FZT751QTC

60VPNPHIGHPERFORMANCETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEO>-60V •IC=-3AHighContinuousCurrent •ICM=-6APeakPulseCurrent •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

美台半导体

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