FX6ASJ-06

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX)................................................0.21Ω •ID......................................................................–6A •IntegratedFastRecoveryDi

FX6ASJ-06

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX)................................................0.21Ω •ID......................................................................–6A •IntegratedFastRecoveryDi

FX6ASJ-06

High-Speed Switching Use Pch Power MOS FET

Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):0.21Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

FX6ASJ-06

isc P-Channel MOSFET Transistor

FX6ASJ-06-T13

High-Speed Switching Use Pch Power MOS FET

Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):0.21Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.