HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 0.21Ω • ID ...................................................................... –6A • Integrated Fast Recovery Di

文件：45.07 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 0.21Ω • ID ...................................................................... –6A • Integrated Fast Recovery Di

文件：50.39 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 0.21 Ω • ID : – 6 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.71 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

文件：378.97 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs

Renesas

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 0.21 Ω • ID : – 6 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.71 Kbytes 页数：7 Pages

RENESAS

瑞萨