HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) ...........55ns

文件：57.5 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) ...........55ns

文件：62.85 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 35 mΩ • ID : – 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：210.32 Kbytes 页数：7 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 35 mΩ • ID : – 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：210.32 Kbytes 页数：7 Pages

RENESAS

瑞萨