7.0 Amps, 600 Volts N-CHANNEL MOSFET

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FS

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop var

文件：144.51 Kbytes 页数：7 Pages

Intersil

14A, 600V, UFS Series N-Channel IGBTs

Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lowe

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HARRIS

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop var

文件：166.04 Kbytes 页数：8 Pages

Fairchild

仙童半导体