FTK4N60F资料datasheet下载供应商报价FS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FTK4N60F	文件：176.53 Kbytes Page：7 Pages	4 Amps, 600 Volt N-CHANNEL POWER MOSFET 文件：176.53 Kbytes 页数：7 Pages	FS	FS
FTK4N60F	文件：300 bytes Page：1 Pages	MOS FET:High Voltage	First Silicon	First Silicon
MGP4N60E	文件：124.46 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications 文件：124.46 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MGP4N60E	文件：120.94 Kbytes Page：5 Pages	Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications 文件：120.94 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MGP4N60ED	文件：146.13 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block 文件：146.13 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI

技术参数

PC：
31.5
ID：
4
VDSS：
600
Vth(min)：
2
RDS：
2.5
VGS(RDS)：
10
Package：
TO-220F

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	FTK4N60I	FIRSTSILICON	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	FTK4N65D	FIRSTSILI		ROHS	56520	一级代理原装正品假一罚十价格优势长期供货	询价
贸泽芯城（深圳）电子科技有限公司	FTK4N65F	FIRST/福斯特	23+	TO220F	28888	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市南科功率半导体有限公司	FTK50N03BDFN33	NK/南科功率	2025+	DFN3333-8	986966	国产	询价
深圳市安富世纪电子有限公司	FTK50N06	FTK	23+	6500	8	专注配单,只做原装进口现货	询价

更多FTK4N60F供应商更新时间2026-4-10 11:01:00

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