丝印：Q4559；Package：SOP8；Super High Density Cell Design for Extremely Low RDS(ON)

文件：682.49 Kbytes 页数：5 Pages

FS

MOS FET:Low Voltage

First Silicon

DUAL OPERATIONAL AMPLIFIER?

文件：56.4 Kbytes 页数：2 Pages

NJRC

日本无线

60V Complementary PowerTrench MOSFET

Features ● N-Channel 4.5 A, 60 V RDS(ON) = 55m @ VGS = 10 V RDS(ON) = 75m @ VGS =4.5V ● P-Channel -3.5 A, -60 V RDS(ON) = 105 m @ VGS =- 10 V RDS(ON) = 135 m @ VGS =-4.5V

文件：78.86 Kbytes 页数：3 Pages

KEXIN

科信电子

N-Channel 60-V (D-S), 175 MOSFET

文件：58.16 Kbytes 页数：2 Pages

KEXIN

科信电子