3 Amps, 800 Volts N-CHANNEL MOSFET

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FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA (Max.) @ VDS = 800V ■ Low RDS(ON) : 3.800 W (Typ.)

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N-CHANNEL POWER MOSFETS

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文件：321.97 Kbytes 页数：6 Pages

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