丝印：R4；Package：SOT-23；30V N-Channel MOSFET

文件：1.1918 Mbytes 页数：6 Pages

FS

MOS FET:Low Voltage

First Silicon

N-Channel Enhancement Mode Power MOSFET

Description The G3404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：823.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G3404B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：864.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G3404BA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.06851 Mbytes 页数：6 Pages

GOFORD

谷峰半导体