Higher speed and longer life

文件：373.21 Kbytes 页数：2 Pages

ACCRETECH

东京精密

丝印：FTBF20K；Package：TBF；Silicon Bridge Rectifiers

Features ● Glass passivated junction ● High surge current capability ● Saves space on printed circuit boards ● High temperature soldering guaranteed: 260°C/10 seconds ● RoHS Compliant

文件：387.74 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：FTBF20M；Package：TBF；Silicon Bridge Rectifiers

Features ● Glass passivated junction ● High surge current capability ● Saves space on printed circuit boards ● High temperature soldering guaranteed: 260°C/10 seconds ● RoHS Compliant

文件：387.74 Kbytes 页数：4 Pages

BILIN

银河微电

N-Channel MOSFET

Applications: ●Adaptor ●Charger ●SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ●Peak Current vs PulseWidth Curve Inductive Switching Curves

文件：229.63 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

General Purpose Transistor

General Purpose Transistor PNP Silicon FEATURES * Complementary NPN Type available (FTD1616A) * High Collector Power Dissipation

文件：265.76 Kbytes 页数：2 Pages

FS

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Low VCE(sat) ● Compliments FTD1664

文件：367.43 Kbytes 页数：2 Pages

FS

TRANSISTOR (PNP)

FEATURES ● Low Collector-Emitter Saturation Voltage ● Large Collector Current ● High Power Dissipation ● Complement to FTD1691

文件：238.96 Kbytes 页数：2 Pages

FS

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) ● Complements the FTD1760

文件：262.1 Kbytes 页数：2 Pages

FS

丝印：I-PAK；Package：TO-251；TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) ● Complements the FTD1760I

文件：267.95 Kbytes 页数：2 Pages

FS

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Low VCE(sat). ● Complements the FTD1766

文件：379.35 Kbytes 页数：2 Pages

FS