N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 页数：6 Pages

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N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSISTOR (PNP)

FEATURES ● High Current Switching Applications. ● Low Collector Saturation Voltage : V CE(SAT)= - 0.4V(max) at I C = - 3A ● High Speed Swithing Time : tstg = 1.0us (Typ.)

文件：270.59 Kbytes 页数：3 Pages

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PNP Transistor

FEATURES ● TO-92 PNP Transistor

文件：267.93 Kbytes 页数：2 Pages

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Medium Power Transistor

Features 1) Large IC. I CMax = 500mA 2) Low VCE(sat) . Ideal for low-voltage operation. 3) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type PNP silicon transistor

文件：153.18 Kbytes 页数：4 Pages

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丝印：HP；Package：SOT-23；Medium Power Transistor

Features 1) Large IC. I CMax = 500mA 2) Low VCE(sat) . Ideal for low-voltage operation. 3) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type PNP silicon transistor

文件：153.18 Kbytes 页数：4 Pages

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丝印：HQ；Package：SOT-23；Medium Power Transistor

Features 1) Large IC. I CMax = 500mA 2) Low VCE(sat) . Ideal for low-voltage operation. 3) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type PNP silicon transistor

文件：153.18 Kbytes 页数：4 Pages

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丝印：HR；Package：SOT-23；Medium Power Transistor

Features 1) Large IC. I CMax = 500mA 2) Low VCE(sat) . Ideal for low-voltage operation. 3) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type PNP silicon transistor

文件：153.18 Kbytes 页数：4 Pages

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TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage ● Complements the 2SC2389S.

文件：91.99 Kbytes 页数：1 Pages

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TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Low Collector-Emitter Saturation Voltage APPLICATIONS General Purpose Application

文件：345.81 Kbytes 页数：2 Pages

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