EEPROM-3-wire

The FT93C46/56/66 series are 1024/2048/4096 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 64/128/256 words of 16 bits  each when the ORG pin is connected to VCC (or unconnected) and 128/256/512 words of 8 bits (1 byte) each when Standard Voltage and Low Voltage Operation:\n       •FT93C46/56/66: VCC = 2.5V to 5.5V\n       •FT93C46A/56A/66A: VCC = 1.8V to 5.5V\nUser Selectable Internal Organization:\n       •FT93C46:     128 x 8 or   64 x 16\n       •FT93C56:     256 x 8 or 128 x 16\n       •FT93C66:     512 x 8 or 256 x 16\;

FMD

辉芒微电子

3-wire Serial EEPROMs 1K/2K/4K HM93C46/56/66

文件：556.23 Kbytes 页数：17 Pages

HMSEMI

华之美半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. FEA

文件：67.45 Kbytes 页数：13 Pages

ISSI

矽成半导体