| 零件型号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FSYC260R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
FutureTechnologyDevicesInternationalLtd. | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDIFuture Technology Devices International Ltd. 飞特帝亚英商飞特帝亚有限公司 | FTDI |
详细参数
- 型号：
FSYC260R
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
05+ |
原厂原装 |
4290 |
只做全新原装真实现货供应 |
询价 | ||
HAR |
23+ |
65480 |
询价 | ||||
INTERSIL |
14+ |
原厂封装 |
9 |
宇航IC只做原装假一罚十 |
询价 | ||
INTERSIL |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
INTERSIL |
24+ |
10 |
全新原装 |
询价 | |||
TI |
N/A |
N/A |
100 |
军工品,原装正品 |
询价 | ||
INTERSIL |
2015+ |
99 |
原装正品 |
询价 |
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