首页 >FSYE913A0R3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FSYE913A0R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | Intersil Intersil Corporation | Intersil | |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil | ||
10A,-100V,0.280Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil |
详细参数
- 型号：
FSYE913A0R3
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
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