FSYE913A0D1中文资料下载供应代理Intersil-114ic电子网

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FSYE913A0D1	文件：73.24 Kbytes Page：9 Pages	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件：73.24 Kbytes 页数：9 Pages	Intersil	Intersil
FSL913A0D1	文件：57.56 Kbytes Page：8 Pages	7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：57.56 Kbytes 页数：8 Pages	Intersil	Intersil
FSS913A0D1	文件：56.38 Kbytes Page：8 Pages	10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.38 Kbytes 页数：8 Pages	Intersil	Intersil

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