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FSYE23A0D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

文件:57.92 Kbytes 页数:8 Pages

Intersil

FSYE23A0D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

文件:57.92 Kbytes 页数:8 Pages

Intersil

FSYE23A0D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

文件:57.92 Kbytes 页数:8 Pages

Intersil

FSYE23A0D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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详细参数

  • 型号:

    FSYE23A0D

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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