Surface Mount Schottky Rectifier Reverse Voltage 30V Forward Current 2A

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GOOD-ARK

固锝电子

肖特基整流管

GOOD-ARK

固锝电子

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description\nThe Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular • 4A, 250V, rDS(ON) = 0.610Ω\n• Total Dose\n   - Meets Pre-RAD Specifications to 100K RAD (Si)\n• Single Event\n   - Safe Operating Area Curve for Single Event Effects\n   - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias\n• Dose Rate\n   - Typi;

Renesas

瑞萨

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Renesas

瑞萨