High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 14 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：104.01 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 14 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：104.01 Kbytes 页数：7 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：174.73 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

文件：56.52 Kbytes 页数：4 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

文件：51.16 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机