High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：105.08 Kbytes 页数：7 Pages

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High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：105.08 Kbytes 页数：7 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：173.89 Kbytes 页数：7 Pages

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Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diod

文件：55.99 Kbytes 页数：4 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diod

文件：50.68 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机