FlashStation FS3600

Highlights • High Performance Over 195,000 iSCSI 4K random write IOPS1 • Easy System Administration Easy to deploy with an intuitive user interface • Effortless Capacity Expansion Flexibly scale up to 72 drives2 to increase storage capacity as demand grows • Virtualization-Ready Integr

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SYNOLOGY

群晖科技

LDO

FOESEMI

新芯矽创

Schottky Barrier Rectifier, Surface Mount

Features • Low Forward Voltage Drop: ♦ FSV340FP: 0.52 V Maximum at 3 A, TA = 25°C ♦ FSV360FP: 0.65 V Maximum at 3 A, TA = 25°C • Larger Cathode Pad for Improved Power Dissipation • Ultra Thin Profile − Maximum Height of 1.0 mm • High Surge Capacity • UL Flammability 94V−0 Classification •

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ONSEMI

安森美半导体

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

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SY

顺烨电子

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

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Intersil