High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：103.58 Kbytes 页数：7 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =22mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：103.58 Kbytes 页数：7 Pages

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Power MOSFETs

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