| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
On/Off,SpringReturnFail-Safe,AC230V | BELIMOBELIMO AIRCONTROLS (USA), INC 贝里莫航空 贝里莫航空控制(美国)有限公司 | BELIMO | ||
On/Off,SpringReturn,AC230V,AuxiliarySwitch | BELIMOBELIMO AIRCONTROLS (USA), INC 贝里莫航空 贝里莫航空控制(美国)有限公司 | BELIMO | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFET IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFET IntersilStar*PowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. Star*PowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
On/Off,SpringReturn,350째F[177째C]forhalfanhour,15sCycleTime | BELIMOBELIMO AIRCONTROLS (USA), INC 贝里莫航空 贝里莫航空控制(美国)有限公司 | BELIMO | ||
On/Off,SpringReturn,350째F[177째C]forhalfanhour,15sCycleTime | BELIMOBELIMO AIRCONTROLS (USA), INC 贝里莫航空 贝里莫航空控制(美国)有限公司 | BELIMO | ||
On/Off,SpringReturn,350째F[177째C]forhalfanhour,AC230V,15sCycleTime | BELIMOBELIMO AIRCONTROLS (USA), INC 贝里莫航空 贝里莫航空控制(美国)有限公司 | BELIMO | ||
On/Off,SpringReturn,350째F[177째C]forhalfanhour,AC230V,15sCycleTime | BELIMOBELIMO AIRCONTROLS (USA), INC 贝里莫航空 贝里莫航空控制(美国)有限公司 | BELIMO | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*Power™RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*Power™RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
峰岹 |
22+ |
DFN8 |
90000 |
只做原装正品现货 优质好货热卖 欢迎咨询 |
询价 | ||
峰岹科技 |
23+ |
DFN8 |
56000 |
fortiortech全系列在售,量大价优 |
询价 | ||
一级代理 |
23+ |
N/A |
82000 |
一级代理放心采购 |
询价 | ||
FOSAN(富信) |
23+ |
SOT233L |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
FS |
22+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
FUXINSEMI(富芯微) |
2112+ |
SOT-23 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
Bel |
22+ |
NA |
80 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
SCHAFFNER |
DIP-2 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FUSHANGTECHNOLOGY |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
询价 | ||
FORTIOR |
23+ |
QFN |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 |
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