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FSGS230R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

文件:78.55 Kbytes 页数:8 Pages

INTERSIL

FSGS230R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

文件:78.55 Kbytes 页数:8 Pages

INTERSIL

FSGS230R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

文件:78.55 Kbytes 页数:8 Pages

INTERSIL

FSGYE230R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystem

文件:81.82 Kbytes 页数:8 Pages

INTERSIL

FSL230

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.65 Kbytes 页数:8 Pages

INTERSIL

FSL230D

5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:45.65 Kbytes 页数:8 Pages

INTERSIL

详细参数

  • 型号:

    FSGS230R

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

供应商型号品牌批号封装库存备注价格
FORESEE(江波龙)
2447
-
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
N/A
24+/25+
158
原装正品现货库存价优
询价
N/A
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ISL
05+
原厂原装
4287
只做全新原装真实现货供应
询价
ISL
23+
65480
询价
NIEC
17+
TO-220F
6200
询价
NIEC
24+
TO-220F-2pin
8866
询价
NIEC
26+
TO-220
86720
全新原装正品价格最实惠 假一赔百
询价
NIEC
23+
TO-220
2800
正品原装货价格低
询价
NIEC
24+
TO-220F
25000
只做原装正品现货 欢迎来电查询15919825718
询价
更多FSGS230R供应商 更新时间2026-1-24 15:01:00