PHW11N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=10.4A RDS(ON)≤0.6Ω GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PSM11N50CT

11.6A500VSingleN?륝hannelPowerMOSFET

SIF11N50E

N-CHANNELPOWERMOSFET

SIHFB11N50A

N-Channel650V(D-S)SuperJunctionPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

SIHFB11N50A

PowerMOSFET

SIHFS11N50A

PowerMOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceand   AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu

SiHFS11N50A

PowerMOSFET

SIHFS11N50A

iscN-ChannelMOSFETTransistor

SIHFS11N50A

N-Channel650V(D-S)PowerMOSFET

SIHFS11N50A

PowerMOSFET

SIHFS11N50ATL

PowerMOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceand   AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu

SIHFSL11N50A

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

SiHFSL11N50A

RepetitiveAvalancheRated

SSFP11N50

StarMOSTPowerMOSFET