10.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：298.28 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

10.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：298.28 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

10.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：298.28 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 78mΩ ● ID

文件：42.53 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 78 mΩ • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：195.52 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 78 mΩ • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：195.52 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 0.23 Ω • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：197.58 Kbytes 页数：7 Pages

RENESAS

瑞萨

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 10V DRIVE • VDSS 100V • rDS (ON) (MAX) 0.23Ω • ID

文件：42.48 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 0.23 Ω • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：197.58 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 150 V • rDS(ON) (max) : 170 mΩ • ID : 10 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：170.81 Kbytes 页数：7 Pages

RENESAS

瑞萨