4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rangi

文件：49.7 Kbytes 页数：6 Pages

INTERSIL

4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs

Renesas

瑞萨

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

Analog Signal Processor ASP for CD players

Overview The LA9230M and LA9231M are analog signal processing and servo control bipolar ICs designed for use in compact disc players; a compact disc player can be configured by combining these ICs, a CD-DSP such as the LC78620E, and a small number of additional components. The differences between

文件：227.45 Kbytes 页数：20 Pages

SANYO

三洋